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 APM3095PU
P-Channel Enhancement Mode MOSFET
Features
*
-30V/-8A, RDS(ON)=95m (typ.) @ VGS=-10V RDS(ON)=140m (typ.) @ VGS=-4.5V
Pin Description
G
D S
* * *
Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant)
Top View of TO-252
S
Applications
*
Power Management in Desktop Computer or DC/DC Converters
G
D
P-Channel MOSFET
Ordering and Marking Information
APM3095P Lead Free Code Handling Code Temp. Range Package Code Package Code U : TO-252 Operating Junction Temp. Range C : -55 to 150 C Handling Code TU : Tube TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : Original Device XXXXX - Date Code
APM3095P U :
APM3095P XXXXX
Note: ANPEC lead-free products contain molding compounds and 100% matte tin plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright (c) ANPEC Electronics Corp. Rev. B.2 - Oct., 2005 1 www.anpec.com.tw
APM3095PU
Absolute Maximum Ratings
Symbol Common Ratings (TA = 25C) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current TC=25C TC=100C TC=25C TC=100C TC=25C TC=100C -30 25 150 -55 to 150 -2.5 -20 -10 -8 -4 50 20 2.5 W C/W V C C A Parameter Rating Unit
Mounted on Large Heat Sink IDP ID PD RJC 300s Pulse Drain Current Tested Continuous Drain Current Maximum Power Dissipation Thermal Resistance-Junction to Case
2
A A
Mounted on PCB of 1in Pad Area IDP ID PD RJA 300s Pulse Drain Current Tested Continuous Drain Current Maximum Power Dissipation Thermal Resistance-Junction to Ambient TA=25C TA=100C TA=25C TA=100C TA=25C TA=100C TA=25C TA=100C TA=25C TA=100C TA=25C TA=100C -20 -10 -4 -2 2.5 1 50 -20 -10 -3 -2 1.6 0.6 75 W C/W W C/W A A
Mounted on PCB of Minimum Footprint IDP ID PD RJA 300s Pulse Drain Current Tested Continuous Drain Current Maximum Power Dissipation Thermal Resistance-Junction to Ambient A A
Copyright (c) ANPEC Electronics Corp. Rev. B.2 - Oct., 2005
2
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APM3095PU
Electrical Characteristics
Symbol Static Characteristics BVDSS IDSS VGS(th) IGSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current VGS=0V, IDS=-250A VDS=-24V, VGS=0V TJ=85C VDS=VGS, IDS=-250A VGS=25V, VDS=0V VGS=-10V, IDS=-6A VGS=-4.5V, IDS=-3A ISD=-2.5A, VGS=0V VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=-25V, Frequency=1.0MHz 95 140 -1 -1.5 -30 -1 -30 -2 100 110 160 V A V nA m Parameter
(TA = 25C unless otherwise noted)
APM3095PU Min. Typ. Max.
Test Condition
Unit
RDS(ON) a Drain-Source On-state Resistance Diode Characteristics VSDa RG Ciss Coss Crss td(ON) Tr td(OFF) Tf Qg Qgs Qgd
Notes:
Diode Forward Voltage
-0.7
-1.3
V pF pF pF
Dynamic Characteristics b Gate Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time VDD=-15V, RL=15, IDS=-1A, VGEN=-10V, RG=6 13 550 120 75 10 8 25 5 20 20 50 15
ns ns ns ns
Gate Charge Characteristics b Total Gate Charge Gate-Source Charge Gate-Drain Charge
a : Pulse test ; pulse width300s, duty cycle2%. b : Guaranteed by design, not subject to production testing.
10 VDS=-15V, VGS=-10V, IDS=-6A 2 1.2
13
nC nC nC
Copyright (c) ANPEC Electronics Corp. Rev. B.2 - Oct., 2005
3
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APM3095PU
Typical Characteristics
Power Dissipation
60 10
Drain Current
50
8
40
-ID - Drain Current (A)
Ptot - Power (W)
6
30
4
20
10 TC=25 C 0 20 40 60 80 100 120 140 160 180
o
2
o
0
0
TC=25 C, VG=-10V 0 20 40 60 80 100 120 140 160 180
Tj - Junction Temperature (C)
Tj - Junction Temperature (C)
Safe Operation Area Normalized Transient Thermal Resistance
100
2 1
Thermal Transient Impedance
-ID - Drain Current (A)
10
it im )L on s( Rd
Duty = 0.5
0.2 0.1 0.1 0.05 0.02 0.01 Single Pulse 0.01 1E-4
2
300us
1
1ms 10ms 100ms 1s
0.1
DC
T =25 C 0.01 C 0.1
o
Mounted on 1in pad o RJA :50 C/W
1
10
100
1E-3
0.01
0.1
1
10
100
-VDS - Drain - Source Voltage (V)
Square Wave Pulse Duration (sec)
Copyright (c) ANPEC Electronics Corp. Rev. B.2 - Oct., 2005
4
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APM3095PU
Typical Characteristics (Cont.)
Output Characteristics
20 18 16 VGS=-7,-8,-9,-10V
200 180 VGS=-4.5V
Drain-Source On Resistance
RDS(ON) - On - Resistance (m)
-6V
-ID - Drain Current (A)
14 -5V 12 10 8 6 4 2 0 0 2 4 6 8 10 -3V -4V
160 140 120 100 80 60 0 4 8 12 16 20 VGS=-10V
-VDS - Drain - Source Voltage (V)
-ID - Drain Current (A)
Transfer Characteristics
20 18 16
1.6
Gate Threshold Voltage
IDS =-250A
Normalized Threshold Vlotage
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25
-ID - Drain Current (A)
14 12 10 8 6 4 2 0 0 1 Tj=25 C
o
Tj=125 C Tj=-55 C
o
o
2
3
4
5
6
0
25
50
75 100 125 150
-VGS - Gate - Source Voltage (V)
Tj - Junction Temperature (C)
Copyright (c) ANPEC Electronics Corp. Rev. B.2 - Oct., 2005
5
www.anpec.com.tw
APM3095PU
Typical Characteristics (Cont.)
Drain-Source On Resistance
2.4 VGS = -10V IDS = -6A
20 10 Tj=150 C
o
Source-Drain Diode Forward
Normalized On Resistance
2.0
1.6
-IS - Source Current (A)
1.2
Tj=25 C 1
o
0.8
0.4 RON@Tj=25 C: 95m 0 25 50 75 100 125 150
o
0.0 -50 -25
0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Tj - Junction Temperature (C)
-VSD - Source - Drain Voltage (V)
Capacitance
800 Frequency=1MHz 700
Gate Charge
10 VDS=-10V IDS= -6A
-VGS - Gate-source Voltage (V)
30
8
600
C - Capacitance (pF)
Ciss
500 400 300 200 100 0 Crss
6
4
Coss
2
0
5
10
15
20
25
0
0
2
4
6
8
10
-VDS - Drain - Source Voltage (V)
QG - Gate Charge (nC)
Copyright (c) ANPEC Electronics Corp. Rev. B.2 - Oct., 2005
6
www.anpec.com.tw
APM3095PU
Package Information
TO-252 (Reference JEDEC Registration TO-252)
E b2 L2 A C1
D H
L1 L b e1 D1 C A1
E1
Dim A A1 b b2 C C1 D D1 E E1 e1 H L L1 L2
Millimeters Min. 2.18 0.89 0.508 5.207 0.46 0.46 5.334 5.2 REF 6.35 5.3 REF 3.96 9.398 0.51 0.64 0.89 1.02 2.032
7
Inches Max. 2.39 1.27 0.89 5.461 0.58 0.58 6.22 6.73 5.18 10.41 Min. 0.086 0.035 0.020 0.205 0.018 0.018 0.210 0.205 REF 0.250 0.209 REF 0.156 0.370 0.020 0.025 0.035 0.040 0.080
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Max. 0.094 0.050 0.035 0.215 0.023 0.023 0.245 0.265 0.204 0.410
Copyright (c) ANPEC Electronics Corp. Rev. B.2 - Oct., 2005
APM3095PU
Physical Specifications
Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition
TP
(IR/Convection or VPR Reflow)
tp Critical Zone T L to T P
Ramp-up
Temperature
TL Tsmax
tL
Tsmin Ramp-down ts Preheat
25
t 25 C to Peak
Time
Classification Reflow Profiles
Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Time maintained above: - Temperature (T L) - Time (tL) Peak/Classificatioon Temperature (Tp) Time within 5C of actual Peak Temperature (tp) Ramp-down Rate Sn-Pb Eutectic Assembly 3C/second max. 100C 150C 60-120 seconds 183C 60-150 seconds See table 1 10-30 seconds Pb-Free Assembly 3C/second max. 150C 200C 60-180 seconds 217C 60-150 seconds See table 2 20-40 seconds
6C/second max. 6C/second max. 6 minutes max. 8 minutes max. Time 25C to Peak Temperature Notes: All temperatures refer to topside of the package .Measured on the body surface.
8 www.anpec.com.tw
Copyright (c) ANPEC Electronics Corp. Rev. B.2 - Oct., 2005
APM3095PU
Classification Reflow Profiles(Cont.)
Table 1. SnPb Entectic Process - Package Peak Reflow Temperature s Package Thickness Volume mm 3 Volume mm 3 <350 350 <2.5 mm 240 +0/-5C 225 +0/-5C 2.5 mm 225 +0/-5C 225 +0/-5C
Table 2. Pb-free Process - Package Classification Reflow Temperatures Package Thickness Volume mm 3 Volume mm 3 Volume mm 3 <350 350-2000 >2000 <1.6 mm 260 +0C* 260 +0C* 260 +0C* 1.6 mm - 2.5 mm 260 +0C* 250 +0C* 245 +0C* 2.5 mm 250 +0C* 245 +0C* 245 +0C* *Tolerance: The device manufacturer/supplier shall assure process compatibility up to and including the stated classification temperature (this means Peak reflow temperature +0C. For example 260C+0C) at the rated MSL level.
Reliability Test Program
Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245C,5 SEC 1000 Hrs Bias @ 125C 168 Hrs, 100% RH, 121C -65C ~ 150C, 200 Cycles
Carrier Tape & Reel Dimensions
t E Po P P1 D
F W
Bo
Ao
D1
Ko
Copyright (c) ANPEC Electronics Corp. Rev. B.2 - Oct., 2005
9
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APM3095PU
Carrier Tape & Reel Dimensions (Cont.)
T2
J C A B
T1
Application
A 330 3
B 100 2 D 1.5 +0.1
C 13 0. 5 D1
J 2 0.5 Po
T1 T2 16.4 + 0.3 2.5 0.5 -0.2 P1 2.0 0.1 Ao 6.8 0.1
W 16+ 0.3 - 0.1 Bo 10.4 0.1
P 8 0.1 Ko 2.5 0.1
E 1.75 0.1 t 0.30.05
TO-252
F 7.5 0.1
1.5 0.25 4.0 0.1
(mm)
Cover Tape Dimensions
Application TO- 252 Carrier Width 16 Cover Tape Width 13.3 Devices Per Reel 2500
Customer Service
Anpec Electronics Corp. Head Office : No.6, Dusing 1st Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369
Copyright (c) ANPEC Electronics Corp. Rev. B.2 - Oct., 2005
10
www.anpec.com.tw


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